Hengping Dong

Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices

Rui Huang, Hengping Dong, Danqing Wang et al. · Applied Physics Letters · 2008 · 46 citations

White Oled, Electrical Engineering, Barrier Layers +14

Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices

Rui Huang, Kunji Chen, Peigao Han et al. · Applied Physics Letters · 2007 · 45 citations

Optical Materials, Engineering, Optoelectronic Devices +16

Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si∕N ratio

Rui Huang, Kunji Chen, Hengping Dong et al. · Applied Physics Letters · 2007 · 33 citations

Electrical Engineering, Solid-state Lighting, Enhanced Electroluminescence Efficiency +13

Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm

Pengzhan Zhang, Kunji Chen, Hengping Dong et al. · Applied Physics Letters · 2014 · 22 citations

Materials Science, Pl Iqe, Electrical Engineering +15

Dynamics of high quantum efficiency photoluminescence from N-Si-O bonding states in oxygenated amorphous silicon nitride films

Pengzhan Zhang, Kunji Chen, Zewen Lin et al. · Applied Physics Letters · 2016 · 18 citations

Engineering, Optoelectronic Devices, Chemistry +18