F. Bassani

<i>Electronic States and Optical Transitions in Solids</i>

F. Bassani, Giuseppe Pastori Parravicini, R A Ballinger et al. · Physics Today · 1976 · 197 citations

Optical Materials, Engineering, Solid-state Chemistry +19

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Reynald Alcotte, M. Martin, J. Moeyaert et al. · APL Materials · 2016 · 125 citations · Full text

Engineering, Optoelectronic Devices, Electronic Devices +16

Indium doping of CdTe and Cd1−<i>x</i>Zn<i>x</i>Te by molecular-beam epitaxy: Uniformly and planar-doped layers, quantum wells, and superlattices

F. Bassani, S. Tatarenko, K. Saminadayar et al. · Journal of Applied Physics · 1992 · 69 citations · Full text

Engineering, Optoelectronic Devices, Planar-doped Layers +17

Luminescence characterization of CdTe:In grown by molecular beam epitaxy

F. Bassani, S. Tatarenko, K. Saminadayar et al. · Applied Physics Letters · 1991 · 54 citations

Materials Science, Ii-vi Semiconductor, Photoluminescence +12

Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)

M. Martin, Damien Caliste, R. Cipro et al. · Applied Physics Letters · 2016 · 54 citations · Full text

Engineering, Annealing Step, Optoelectronic Devices +18