Victor Yi-Qian Zhuo

Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

Victor Yi-Qian Zhuo, Yu Jiang, Minghua Li et al. · Applied Physics Letters · 2013 · 76 citations

Natural Sciences, Materials Engineering, Materials Science +17

Novel selector for high density non-volatile memory with ultra-low holding voltage and 10<sup>7</sup> on/off ratio

Hongxin Yang, Minghua Li, Wei He et al. · 2015 · 42 citations

Engineering, Electrical Engineering, Materials Science +17

Improved Switching Uniformity and Low-Voltage Operation in ${\rm TaO}_{x}$-Based RRAM Using Ge Reactive Layer

Victor Yi-Qian Zhuo, Yu Jiang, Rong Zhao et al. · IEEE Electron Device Letters · 2013 · 41 citations

Engineering, Electrical Engineering, Materials Science +16

Analog switching characteristics in TiW/Al2O3/Ta2O5/Ta RRAM devices

Wen‐Dong Song, Weijie Wang, Hock Koon Lee et al. · Applied Physics Letters · 2019 · 37 citations

Natural Sciences, Materials Engineering, Materials Science +17

A Non-Idealities Aware Software–Hardware Co-Design Framework for Edge-AI Deep Neural Network Implemented on Memristive Crossbar

Tiancheng Cao, Chen Liu, Weijie Wang et al. · IEEE Journal on Emerging and Selected Topics in Circuits and Systems · 2022 · 25 citations

Engineering, Computer Engineering, Electrical Engineering +17