Meeghage Madusanka Perera

High Mobility WSe₂ p<i>-</i> and n<i>-</i>Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

Hsun‐Jen Chuang, Xuebin Tan, N. Ghimire et al. · Nano Letters · 2014 · 468 citations · Full text

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe₂, MoS₂, and MoSe₂ Transistors

Hsun‐Jen Chuang, Bhim Chamlagain, Michael Köehler et al. · Nano Letters · 2016 · 407 citations · Full text

Engineering, Low-resistance 2D/2d, Two-dimensional Materials +21

Improved Carrier Mobility in Few-Layer MoS₂ Field-Effect Transistors with Ionic-Liquid Gating

Meeghage Madusanka Perera, Ming‐Wei Lin, Hsun‐Jen Chuang et al. · ACS Nano · 2013 · 336 citations · Full text

Mobility Improvement and Temperature Dependence in MoSe₂ Field-Effect Transistors on Parylene-C Substrate

Bhim Chamlagain, Qing Li, N. Ghimire et al. · ACS Nano · 2014 · 194 citations

Engineering, Temperature Dependence, Semiconductor Device +17

Rectification in Nanoscale Devices Based on an Asymmetric Five‐Coordinate Iron(III) Phenolate Complex

Lanka D. Wickramasinghe, Meeghage Madusanka Perera, Li Li et al. · Angewandte Chemie International Edition · 2013 · 28 citations

Engineering, Asymmetric Five‐coordinate Iron, Asymmetric Iron +19