S. T. Ng - Concepedia

Author

S. T. Ng

Nanyang Technological University

Also Known As

S T Ng, S. T. Ng, S.T. Ng, Say Tyam Ng

Publications

321

Citations

H-Index

Concepts

All Affiliations

Nanyang Technological University National University of Singapore Institute of Microelectronics The University of Texas at Austin Singapore Institute of Manufacturing Technology

About

S. T. Ng is an author at Nanyang Technological University specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	245
2	Applied Physics	7	7	145
3	Electrical Engineering	3	3	62
4	Industrial Engineering	1	1	100
5	Materials Science	1	1	26

S. T. Ng

Publications

245

Citations

H-Index

Page 1

	Year	Citations
Tool geometry study in micromachining Fengzhou Fang, Hu Wu, X D Liu, Journal of Micromechanics and Microengineering Industrial DesignTool BreakageEngineeringTool Geometry StudyMicrofabrication	2003	100
Impact of surface rouglmess on silicon and germanium ultra-thin-body MOSFETs Tony Low, M.F. Li, W. J. Fan, EngineeringSilicon On InsulatorSemiconductor DeviceNanoelectronicsSurface Rouglmess	2005	34
Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k∙p method Yu Dang, W. J. Fan, S. T. Ng, Journal of Applied Physics Semiconductor TechnologyPhotonicsWide-bandgap SemiconductorEngineeringPhysics	2005	26
Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k∙p method Yu Dang, W. J. Fan, S. T. Ng, Journal of Applied Physics Categoryquantum ElectronicsTen-band K∙p MethodEngineeringOptoelectronic DevicesAnnealing Time	2005	26
Effects of tensile strain in barrier on optical gain spectra of GaInNAs/GaAsN quantum wells W. J. Fan, S. T. Ng, S. F. Yoon, Journal of Applied Physics SemiconductorsTensile StrainSemiconductor TechnologyGainnas/gaasn QwsEngineering	2003	17
Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors Tony Low, M. F. Li, Yee‐Chia Yeo, Journal of Applied Physics SemiconductorsEnergy DispersionElectrical EngineeringSemiconductor TechnologyEngineering	2005	15
Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy Tien Khee Ng, Sanji Yoon, W. J. Fan, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Wide-bandgap SemiconductorEngineeringGaas Barrier LayerOptoelectronic DevicesThermal Energy	2003	14
Investigation of the optical properties of InGaAsN∕GaAs∕GaAsP multiple-quantum-well laser with 8-band and 10-band k·p model S. T. Ng, W. J. Fan, S. F. Yoon, Journal of Applied Physics Wide-bandgap SemiconductorCategoryquantum ElectronicsOptical MaterialsQuantum PhotonicsEngineering	2004	13

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