Moonyoung Jeong

The breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor(RCAT) for 88 nm feature size and beyond

J.Y. Kim, Chang‐Seok Lee, S.E. Kim et al. · 2003 · 81 citations

Engineering, Electrical Engineering, Electronic Materials +16

Ongoing Evolution of DRAM Scaling via Third Dimension -Vertically Stacked DRAM -

Ji Won Han, S.H. Park, Moonyoung Jeong et al. · 2023 · 75 citations

Engineering, Computer Engineering, Electrical Engineering +16

An Innovative Indicator to Evaluate DRAM Cell Transistor Leakage Current Distribution

Min Hee Cho, Namho Jeon, Taek Yong Kim et al. · IEEE Journal of the Electron Devices Society · 2017 · 24 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +16

A mechanically enhanced storage node for virtually unlimited height (MESH) capacitor aiming at sub 70nm DRAMs

D.H. Kim, J.Y. Kim, M. Huh et al. · 2004 · 20 citations

Engineering, Electrical Engineering, Materials Science +9

Self-Aligned in 2Pitch Cell Array Transistor (S2CAT) for 4F2 Based DRAM Generation Extension

Seokhan Park, Gyuhwan Oh, Bowon Yoo et al. · 2023 · 16 citations

Engineering, Computer Engineering, Electrical Engineering +13