K. Tabuchi

Effect of Plasma Treatment and Dielectric Diffusion Barrier on Electromigration Performance of Copper Damascene Interconnects

Takamasa Usui, Hideshi Miyajima, Hideaki Masuda et al. · Japanese Journal of Applied Physics · 2006 · 25 citations

Natural Sciences, Electrical Engineering, Materials Science +15

Highly reliable Cu/low-k dual-damascene interconnect technology with hybrid (PAE/SiOC) dielectrics for 65 nm-node high performance eDRAM

Akihiro Kajita, T. Usui, Masao Yamada et al. · 2004 · 16 citations

Engineering, Computer Engineering, Electrical Engineering +16

A manufacturable copper/low-k SiOC/SiCN process technology for 90 nm-node high performance eDRAM

Katsumi Higashi, Norimasa Nakamura, Hiromi Miyajima et al. · 2003 · 15 citations

Engineering, Electrical Engineering, Materials Science +16

Pre-layout delay calculation specification for CMOS ASIC libraries

H. Edamatsu, K. Homma, M. Kakimoto et al. · 2002 · 12 citations

Engineering, Computer Engineering, Electrical Engineering +17

A strategy using a copper/low-k BEOL process to prevent negative-bias temperature instability (NBTI) in p-MOSFETs with ultra-thin gate oxide

Aran Suzuki, K. Tabuchi, Hajime Kimura et al. · 2003 · 11 citations

Engineering, Electrical Engineering, Materials Science +17