20
Publications
896
Citations
16
H-Index
1997
Active since
T. Höchbauer is an author at Los Alamos National Laboratory specializing in applied physics, materials science, and engineering.
Top concepts
Applied PhysicsEngineeringMaterial ScienceSurface ScienceCrystalline DefectsHydrogenMicroelectronicsPhysicsMicrostructureMaterials Engineering
Publications per year
1997–2007
20
20
Physical mechanisms behind the ion-cut in hydrogen implanted silicon
T. Höchbauer, Amit Misra, M. Nastasi et al. · Journal of Applied Physics · 2002 · 118 citations
Nucleation and growth of platelets in hydrogen-ion-implanted silicon
M. Nastasi, T. Höchbauer, Jung-Kun Lee et al. · Applied Physics Letters · 2005 · 94 citations · Full text
Orientation dependence of blistering in H-implanted Si
Yi Zheng, S. S. Lau, T. Höchbauer et al. · Journal of Applied Physics · 2001 · 60 citations
Materials Science, Orientation Dependence, Blistering Kinetics +10
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