Katsumi Kishino Katsumi Kishino

Growth of Self-Organized GaN Nanostructures on Al₂O₃(0001) by RF-Radical Source Molecular Beam Epitaxy

Masaki Yoshizawa, Akihiko Kikuchi, Masashi Mori et al. · Japanese Journal of Applied Physics · 1997 · 360 citations

Materials Science, High Density, Aluminium Nitride +11

Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well

Vidya Ramesh, Akifumi Kikuchi, Katsumi Kishino Katsumi Kishino et al. · Journal of Applied Physics · 2010 · 102 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +15

Substrate Nitridation Effects on GaN Grown on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source

Akihiko Kikuchi, H. Hoshi, Katsumi Kishino Katsumi Kishino · Japanese Journal of Applied Physics · 1994 · 81 citations

Wide-bandgap Semiconductor, Crystal Structure, Aluminium Nitride +17

Two-Dimensional Growth of GaN on Various Substrates by Gas Source Molecular Beam Epitaxy Using RF-Radical Nitrogen Source

Akihiko Kikuchi, H. Hoshi, Katsumi Kishino Katsumi Kishino · Japanese Journal of Applied Physics · 1995 · 17 citations

Materials Science, Lower Growth Rate, Electrical Engineering +14

600 nm-Range GaInP/AlInP Multi-Quantum-Well (MQW) Lasers Grown on Misorientation Substrates by Gas Source Molecular Beam Epitaxy (GS-MBE)

Akihiko Kikuchi, Katsumi Kishino Katsumi Kishino, Yawara Kaneko · Japanese Journal of Applied Physics · 1991 · 14 citations

Wide-bandgap Semiconductor, Photonics, Misorientation Substrates +14