H. Hoshi

Substrate Nitridation Effects on GaN Grown on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source

Akihiko Kikuchi, H. Hoshi, Katsumi Kishino Katsumi Kishino · Japanese Journal of Applied Physics · 1994 · 81 citations

Wide-bandgap Semiconductor, Crystal Structure, Aluminium Nitride +17

V-band high-power low phase-noise monolithic oscillators and investigation of low phase-noise performance high drain bias

Tatsuya Kashiwa, Takao Ishida, Takayuki Katoh et al. · IEEE Transactions on Microwave Theory and Techniques · 1998 · 25 citations

Low-power Electronics, Electrical Engineering, Engineering +13

Two-Dimensional Growth of GaN on Various Substrates by Gas Source Molecular Beam Epitaxy Using RF-Radical Nitrogen Source

Akihiko Kikuchi, H. Hoshi, Katsumi Kishino Katsumi Kishino · Japanese Journal of Applied Physics · 1995 · 17 citations

Materials Science, Lower Growth Rate, Electrical Engineering +14

1 watt compact Ka-band MMIC power amplifiers using lumped element matching circuits

M. Komaru, H. Hoshi, H. Kurusu et al. · 2002 · 12 citations

Electrical Engineering, Compact Mmic Chip, Engineering +13

Effects of V/III supply ratio on improvement of crystal quality of zincblende GaN grown by gas source molecular beam epitaxy using RF-radical nitrogen source

Akihiko Kikuchi, H. Hoshi, Katsumi Kishino · Journal of Crystal Growth · 1995 · 11 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6