I. Shtrichman - Concepedia

Author

I. Shtrichman

Semi Conductor Devices (Israel)

Also Known As

I Shtrichman, I. Shtrichman, Itay Shtrichman

Publications

876

Citations

H-Index

Concepts

All Affiliations

Semi Conductor Devices (Israel)Ministry of Defense Technion – Israel Institute of Technology University of California, Santa Barbara

About

I. Shtrichman is an author at Semi Conductor Devices (Israel) specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	18	425
2	Applied Physics	14	16	390
3	Natural Sciences	3	3	50
4	Computer Engineering	2	2	38
5	Education	1	1	12

I. Shtrichman

Publications

750

Citations

H-Index

Page 1

	Year	Citations
InAsSb-based XBnn bariodes grown by molecular beam epitaxy on GaAs Eliezer Weiss, O. Klin, Steve Grossmann, Journal of Crystal Growth Materials ScienceElectrical EngineeringEngineeringApplied PhysicsInassb-based Xbnn Bariodes	2011	60
Photoluminescence of a single InAs quantum dot molecule under applied electric field I. Shtrichman, Claus Metzner, Brian D. Gerardot, Physical review. B, Condensed matter	2002	55
Type II superlattice technology for LWIR detectors P. C. Klipstein, Eran Avnon, Daniel Azulai, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE	2016	51
XBn barrier detectors for high operating temperatures P. C. Klipstein, O. Klin, Steve Grossman, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesSemiconductors	2010	49
Low SWaP MWIR detector based on XBn focal plane array P. C. Klipstein, Y. Gross, D. A. Aronov, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE	2013	47
MWIR InAsSb XBn detectors for high operating temperatures P. C. Klipstein, O. Klin, Steve Grossman, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE	2010	31
Picoseconds time resolved photoinduced absorption by infrared active vibrations as a probe for charge photogeneration in MEH-PPV/C60 composites U. Mizrahi, I. Shtrichman, D. Gershoni, Synthetic Metals Materials ScienceEngineeringPhotochemistryOptical PropertiesSpectroscopy	1999	30
High operating temperature XBn-InAsSb bariode detectors P. C. Klipstein, O. Klin, Steven H. Grossman, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Wide-bandgap SemiconductorBariode DevicesEngineeringSemiconductor MaterialsOptoelectronic Devices	2011	29
High performance InAlSb MWIR detectors operating at 100K and beyond A. Glozman, Eli Harush, Eli Jacobsohn, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Electrical EngineeringScds 3EngineeringRadiation DetectionAdvanced Packaging (Semiconductors)	2006	26
Development and Production of Array Barrier Detectors at SCD P. C. Klipstein, Eran Avnon, Y. Benny, Journal of Electronic Materials Electrical EngineeringEngineeringArray Barrier DetectorsSensor ArrayInstrumentation	2017	25

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