J. L. Glenn

SiGe HBT technology: device and application issues

D.L. Harame, L.E. Larson, M. Case et al. · 2002 · 49 citations

Engineering, Electrical Engineering, Analog Electronics +16

12-GHz Gilbert mixers using a manufacturable Si/SiGe epitaxial-base bipolar technology

J. L. Glenn, M. Case, D.L. Harame et al. · 2002 · 26 citations

Engineering, Electrical Engineering, Microelectronics +16

Three dimensional devices fabricated by silicon epitaxial lateral overgrowth

G.W. Neudeck, Peter J. Schubert, J. L. Glenn et al. · Journal of Electronic Materials · 1990 · 25 citations

Engineering, Materials Engineering, Materials Science +14

A novel vertical deep trench RESURF DMOS (VTR-DMOS)

J. L. Glenn, J. Siekkinen · 2002 · 15 citations

Engineering, Electrical Engineering, Microelectronics +12

Fully planar method for creating adjacent ‘‘self-isolating’’ silicon-on-insulator and epitaxial layers by epitaxial lateral overgrowth

J. L. Glenn, G.W. Neudeck, C.K. Subramanian et al. · Applied Physics Letters · 1992 · 13 citations

Engineering, Electrical Engineering, Materials Science +17