J. Andrzejewski

Eight-band k⋅p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots

J. Andrzejewski, G. Sęk, Eoin P. O’Reilly et al. · Journal of Applied Physics · 2010 · 55 citations · Full text

Categoryquantum Electronics, Optical Materials, Engineering +24

Wetting layer states of InAs∕GaAs self-assembled quantum dot structures: Effect of intermixing and capping layer

G. Sęk, K. Ryczko, M. Motyka et al. · Journal of Applied Physics · 2007 · 34 citations · Full text

Optical Materials, Engineering, Inas∕gaas Quantum Dot +20

The energy-fine structure of GaInNAs∕GaAs multiple quantum wells grown at different temperatures and postgrown annealed

R. Kudrawiec, E.-M. Pavelescu, J. Andrzejewski et al. · Journal of Applied Physics · 2004 · 32 citations

Materials Science, Different Temperatures, Photoluminescence +14

Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

A. Maryński, G. Sęk, Anna Musiał et al. · Journal of Applied Physics · 2013 · 31 citations

Optical Materials, Engineering, Optoelectronic Devices +19

Carrier relaxation dynamics in InAs/GaInAsP/InP(001) quantum dashes emitting near 1.55 <i>μ</i>m

M. Syperek, Łukasz Dusanowski, J. Andrzejewski et al. · Applied Physics Letters · 2013 · 28 citations

Engineering, Nuclear Physics, Theoretical High-energy Physic +19