J. Andrzejewski - Concepedia

Author

J. Andrzejewski

Wrocław University of Science and Technology ORCID

Also Known As

(:unav), J Andrzejewski, J. Andrzejewski, JANUSZ ANDRZEJEWSKI, Janusz Andrzejewski

Publications

497

Citations

H-Index

Concepts

All Affiliations

Wrocław University of Science and Technology Institute of Physics University of Kassel École Polytechnique Fédérale de Lausanne University of Würzburg

About

J. Andrzejewski is an author at Wrocław University of Science and Technology specializing in physics, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	17	401
2	Applied Physics	14	17	401
3	Natural Sciences	7	7	177
4	Chemistry	2	2	79
5	Electrical Engineering	2	2	29

J. Andrzejewski

Publications

411

Citations

H-Index

Page 1

	Year	Citations
Eight-band k⋅p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots J. Andrzejewski, G. Sęk, Eoin P. O’Reilly, Journal of Applied Physics Categoryquantum ElectronicsOptical MaterialsEngineeringColloidal NanocrystalsOptoelectronic Devices	2010	55
Wetting layer states of InAs∕GaAs self-assembled quantum dot structures: Effect of intermixing and capping layer G. Sęk, K. Ryczko, M. Motyka, Journal of Applied Physics Optical MaterialsEngineeringInas∕gaas Quantum DotSemiconductor NanostructuresSemiconductors	2007	34
The energy-fine structure of GaInNAs∕GaAs multiple quantum wells grown at different temperatures and postgrown annealed R. Kudrawiec, E.-M. Pavelescu, J. Andrzejewski, Journal of Applied Physics Materials ScienceDifferent TemperaturesPhotoluminescenceEngineeringPhysics	2004	32
Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy A. Maryński, G. Sęk, Anna Musiał, Journal of Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesElectronic StructureSemiconductor Nanostructures	2013	31
Carrier relaxation dynamics in InAs/GaInAsP/InP(001) quantum dashes emitting near 1.55 <i>μ</i>m M. Syperek, Łukasz Dusanowski, J. Andrzejewski, Applied Physics Letters EngineeringNuclear PhysicsTheoretical High-energy PhysicAugust 2013Semiconductor Nanostructures	2013	28
Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures Łukasz Dusanowski, Anna Musiał, A. Maryński, Physical Review B EngineeringExcitation Energy TransferExciton LuminescenceSemiconductor NanostructuresPolariton Dynamic	2014	26
Influence of electronic coupling on the radiative lifetime in the (In,Ga)As/GaAs quantum dot–quantum well system M. Syperek, J. Andrzejewski, W. Rudno‐Rudziński, Physical Review B Categoryquantum ElectronicsQuantum PhotonicsEngineeringSemiconductorsQuantum Dots	2012	25
Energy Band Structure of Zn3P2-Type Semiconductors: Analysis of the Crystal Structure Simplifications and Energy Band Calculations J. Andrzejewski, J. Misiewicz physica status solidi (b) Crystal StructureEngineeringEnergy Band StructureCrystal Structure SimplificationsComputational Chemistry	2001	24
Toward weak confinement regime in epitaxial nanostructures: Interdependence of spatial character of quantum confinement and wave function extension in large and elongated quantum dots Anna Musiał, Peter Werner Gold, J. Andrzejewski, Physical Review B Categoryquantum ElectronicsEngineeringColloidal NanocrystalsOptoelectronic DevicesSemiconductor Nanostructures	2014	20
Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast Philipp Ridha, Lianhe Li, M. Mexis, IEEE Journal of Quantum Electronics Categoryquantum ElectronicsQuantum PhotonicsEngineeringColloidal NanocrystalsPolarization Properties	2010	19

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