J. Moriyama

Quantized hall and transverse resistivities in silicon MOS n-inversion layers

Kazuo Yoshihiro, J. Kinoshita, Katsuya Inagaki et al. · Physica B+C · 1983 · 22 citations

Engineering, Electrical Engineering, Physics +11

Quantized Hall Resistivity in Si-MOSFETs Measured at Liq. ³He Temperatures

Kazuo Yoshihiro, J. Kinoshita, Katsuya Inagaki et al. · Journal of the Physical Society of Japan · 1982 · 21 citations

Engineering, Electrical Engineering, Physics +11

High precision measurements of the hall effect for silicon mos inversion layers in strong magnetic fields

K. yoshlhiro, J. Kinoshita, Katsuya Inagaki et al. · Surface Science · 1982 · 18 citations

Natural Sciences, Materials Science, Physics +12

Temperature dependence of effective mobility edge and inelastic scattering time in silicon MOS inversion layers in strong magnetic fields

J. Moriyama, Shinji Kawaji · Solid State Communications · 1983 · 18 citations

Natural Sciences, Materials Science, Physics +16

Analysis of Temperature Dependent Hall Conductivity in Silicon Inversion Layers in Strong Magnetic Fields by a Mobility Edge Model

Shinji Kawaji, J. Wakabayashi, J. Moriyama · Journal of the Physical Society of Japan · 1981 · 10 citations

Natural Sciences, Materials Science, Physics +17