Quantized Hall Resistivity in Si-MOSFETs Measured at Liq. ³He Temperatures

Abstract

The transverse and Hall resistivities of electrons in Si–MOS inversion layer have been measured at T ≃0.5 K in the magnetic fields H =9.0 T and 10.5 T, at the gate voltages around the transverse resistivity minima. The Hall resistivity is found to be integral fractions of h / e 2 in precision better than 2 parts in 10 7 over the concentration of electrons i e H / h c ranging from 1×10 12 cm -2 ( i =4) to 3×10 12 cm -2 ( i =12).