D. Erbetta

Overcoming Temperature Limitations in Phase Change Memories With Optimized ${\rm Ge}_{\rm x}{\rm Sb}_{\rm y}{\rm Te}_{\rm z}$

P. Zuliani, E. Varesi, Elisabetta Palumbo et al. · IEEE Transactions on Electron Devices · 2013 · 131 citations

Engineering, Materials Engineering, Materials Science +10

Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories

Mattia Boniardi, Daniele Ielmini, I. Tortorelli et al. · Solid-State Electronics · 2010 · 29 citations

Engineering, Materials Engineering, Materials Science +14

Thermal Stability of Ge2Sb2Te5 in Contact with Ti and TiN

Vijayaharan A. Venugopal, G. Ottaviani, C. Bresolin et al. · Journal of Electronic Materials · 2009 · 24 citations

Engineering, Materials Engineering, Materials Science +12

Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond

A. Pirovano, F. Pellizzer, I. Tortorelli et al. · Solid-State Electronics · 2008 · 23 citations

Engineering, Electrical Engineering, Materials Science +11

Self-aligned μTrench phase-change memory cell architecture for 90nm technology and beyond

A. Pirovano, F. Pellizzer, I. Tortorelli et al. · 2007 · 23 citations

Engineering, Computer Engineering, Electrical Engineering +13