M. Sağlam

Interpreting the nonideal reverse bias C-V characteristics and importance of the dependence of Schottky barrier height on applied voltage

A. Türüt, M. Sağlam, Hasan Efeoğlu et al. · Physica B Condensed Matter · 1995 · 161 citations

Electrical Engineering, Schottky Barrier Height, Engineering +6

Parameter extraction from non-ideal C−V characteristics of a Schottky diode with and without interfacial layer

A. Türüt, Necati Yalçın, M. Sağlam · Solid-State Electronics · 1992 · 152 citations

Electrical Engineering, Engineering, Parameter Extraction +4

On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature

Şaki̇r Aydoğan, M. Sağlam, A. Türüt · Applied Surface Science · 2005 · 106 citations

Materials Engineering, Materials Science, Material Analysis +8

The bias-dependence change of barrier height of Schottky diodes under forward bias by including the series resistance effect

A. Türüt, Ali Kökçe, M. Sağlam · Physica Scripta · 1996 · 101 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Some electrical properties of polyaniline/p-Si/Al structure at 300K and 77K temperatures

Şaki̇r Aydoğan, M. Sağlam, A. Türüt · Microelectronic Engineering · 2007 · 101 citations

Materials Science, Materials Engineering, Electrical Engineering +11