Bhawani Shankar

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Kelly Woo, Zhengliang Bian, Maliha Noshin et al. · Journal of Physics Materials · 2024 · 65 citations · Full text

Engineering, Materials Science, Physics +17

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By ${\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x}$ O Based Gate Stack Engineering

Sayak Dutta Gupta, Ankit Soni, Vipin Joshi et al. · IEEE Transactions on Electron Devices · 2019 · 51 citations

Engineering, Electrical Engineering, Materials Science +17

Capacitance–conductance spectroscopic investigation of interfacial oxide layer in Ni/4H–SiC (0001) Schottky diode

Sanjeev Kumar Gupta, Bhawani Shankar, William R. Taube et al. · Physica B Condensed Matter · 2013 · 40 citations

Engineering, Materials Engineering, Materials Science +17

ESD Reliability of AlGaN/GaN HEMT Technology

Bhawani Shankar, Srinivasan Raghavan, Mayank Shrivastava · IEEE Transactions on Electron Devices · 2019 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

Distinct Failure Modes of AlGaN/GaN HEMTs Under ESD Conditions

Bhawani Shankar, Srinivasan Raghavan, Mayank Shrivastava · IEEE Transactions on Electron Devices · 2020 · 28 citations

Engineering, Electrical Engineering, Materials Science +17