H. W. Karner

Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations

M. Karner, O. Baumgartner, Zlatan Stanojević et al. · 2016 · 35 citations

Engineering, Computer Engineering, Electrical Engineering +17

Phase-space solution of the subband Boltzmann transport equation for nano-scale TCAD

Zlatan Stanojević, M. Karner, O. Baumgartner et al. · 2016 · 13 citations

Engineering, Electrical Engineering, Computational Physics +16

Performance and Variability-Aware SRAM Design for Gate-All-Around Nanosheets and Benchmark with FinFETs at 3nm Technology Node

G. Rzepa, Krishna K. Bhuwalka, O. Baumgartner et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 13 citations

Engineering, Computer Engineering, Electrical Engineering +17

Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies

G. Rzepa, M. Karner, O. Baumgartner et al. · 2021 · 10 citations

Engineering, Computer Engineering, Electrical Engineering +14