A. E. Staton-Bevan - Concepedia

Author

A. E. Staton-Bevan

Also Known As

A Staton-Bevan, A. E. Staton-Bevan, A. E. Staton-bevan, A. Staton-Bevan, A.E Staton-Bevan, A.E. Staton-Bevan, Anne E Staton-Bevan, Anne E. Staton-Bevan, Anne E. Staton-bevan, Anne Staton-Bevan

Publications

666

Citations

H-Index

Concepts

All Affiliations

Imperial College London

About

A. E. Staton-Bevan is an author at Imperial College London specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	512
2	Applied Physics	7	7	321
3	Materials Science	7	7	457
4	Materials Engineering	4	4	254
5	Electrical Engineering	3	3	137

A. E. Staton-Bevan

Publications

589

Citations

H-Index

Page 1

	Year	Citations
The alloying behaviour and mechanical properties of polycrystalline Ni3Al (?? phase) with ternary additions Rees D. Rawlings, A. E. Staton-Bevan Journal of Materials Science Materials ScienceMaterials EngineeringEngineeringSuperalloyMechanical Properties	1975	176
The deformation behaviour of single crystal Ni3(Al, Ti) A. E. Staton-Bevan, R. D. Rawlings physica status solidi (a) Materials ScienceHigh Temperature MaterialsEngineeringSevere Plastic DeformationCube Slip	1975	107
Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE S.D. Parker, Robin L. Williams, R. Droopad, Semiconductor Science and Technology Materials ScienceElectrical EngineeringEpitaxial GrowthEngineeringK Mobilities	1989	82
Dislocation structures in deformed single-crystal Ni<sub>3</sub>(Al, Ti) A. E. Staton-Bevan, Rees D. Rawlings Philosophical magazine	1975	77
The orientation and temperature dependence of the work-hardening rate of single crystal Ni<sub>3</sub>(Al<sub>3</sub>, Ti) A. E. Staton-Bevan Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties EngineeringSevere Plastic DeformationWork-hardening RateTemperature DependenceWork Hardening	1983	46
A transmission electron microscopy and reflection high-energy electron diffraction study of the initial stages of the heteroepitaxial growth of InSb on GaAs (001) by molecular beam epitaxy Xinwei Zhang, A. E. Staton-Bevan, D. W. Pashley, Journal of Applied Physics EngineeringTransmission Electron MicroscopyHeteroepitaxial GrowthOptoelectronic DevicesSemiconductor Nanostructures	1990	44
The orientation and temperature dependence of the 0.2% proof stress of single crystal Ni3 (Al, Ti) A. E. Staton-Bevan Scripta Metallurgica Materials ScienceMaterials EngineeringAluminium NitrideEngineeringSuperalloy	1983	17
Dislocation structures in Zr3Al-based alloys P. Holdway, A. E. Staton-Bevan Journal of Materials Science Materials EngineeringMaterials ScienceEngineeringDislocation InteractionMechanical Engineering	1986	15
Relaxation mechanisms in single InxGa1−xAs epilayers grown on misoriented GaAs(111¯)B substrates S. P. Edirisinghe, A. E. Staton-Bevan, Robert Grey Journal of Applied Physics EngineeringTransmission Electron MicroscopySemiconductorsMisfit Strain RelaxationSingle Inxga1−xas Epilayers	1997	14
A TEM investigation of the initial stages of InSb growth on GaAs (001) by molecular beam epitaxy Xiaolei Zhang, A. E. Staton-Bevan, D. W. Pashley Materials Science and Engineering B Tem InvestigationElectrical EngineeringEngineeringPhysicsApplied Physics	1990	11

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