Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE

Abstract

The MBE growth and doping of heteroepitaxial layers of InSb on GaAs (100) are investigated. The layers are assessed by low-field Hall and magnetoresistivity measurements and high-field Shubnikov-de Haas studies together with infrared transmission, and TEM. The mechanism for silicon incorporation is investigated as a function of growth temperature. At low growth temperatures ( approximately=340 degrees C) silicon acts only as a donor and can produce electron concentrations up to 3*1018 cm-3 with 77 K mobilities identical to those found with bulk material. Although higher concentrations than 3*1018 cm-3 can be achieved; auto-compensation appears to occur in those samples. The 77 K mobilities achieved for less heavily doped samples (>40000 cm2 V-1 s-1 for n=1.2*1017 cm-3 for samples grown at 340 degrees C) are the highest low-temperature mobilities yet reported for n-type InSb films of approximately=1 mu m thickness grown on GaAs. However, higher growth temperatures ( approximately=420 degrees C) combined with constant silicon flux are found to simultaneously decrease electron concentration and mobility measured at 77 K although the structural quality as assessed by TEM remains unchanged. Analysis of the observed behaviour in terms of the Brooks-Herring model of ionised impurity scattering, modified for nonparabolicity, suggests that silicon is acting amphoterically with compensation ratios (NA/ND) reaching 0.5 at the higher temperatures. The effect of the interface between GaAs and InSb (lattice mismatch=14%) on the electrical properties is studied by introducing doping slabs of thickness approximately=1300 AA at various distances (d) between the interface (d=0 mu m) and the surface (d approximately=1.5 mu m) of the epilayer. A series of peaks not periodic in reciprocal field (1/B) are found at low fields with B parallel to the slabs and are interpreted as arising from the diamagnetic depopulation of the large number of subbands occupied as a result of the considerable thickness of the slabs. Be doping at 2*1019 cm-3 was demonstrated and, as with silicon, the bulk mobility corresponding to this hole concentration was achieved.