Statistics
Publications
2
Citations
22
H-Index
2
Active since
2021
Yinghuan Lv is an author at Shanghai Institute of Microsystem and Information Technology.
Publications per year
2021–2021
2
2
A highly reliable radiation hardened 8T SRAM cell design
Yinghuan Lv, Qing Wang, Hao Ge et al. · Microelectronics Reliability · 2021 · 11 citations
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