R.D. Yadvish

High temperature characteristics of InGaAsP/InP laser structures

H. Temkin, D. Coblentz, R. A. Logan et al. · Applied Physics Letters · 1993 · 88 citations

Engineering, Electrical Engineering, Materials Science +17

38.5 km error free transmission at 10 Gbit/s instandard fibre using a low chirp,spectrally filtered, directly modulated 1.55 µm DFB laser

Paul A. Morton, Gleb Shtengel, L.D. Tzeng et al. · Electronics Letters · 1997 · 47 citations

Engineering, Communication, Electrical Engineering +15

Dispersion-penalty-free transmission over 130-km standard fiber using a 1.55-μm, 10-Gb/s integrated EA/DFB laser with low-extinction ratio and negative chirp

Y.K. Park, T.V. Nguyen, Paul A. Morton et al. · IEEE Photonics Technology Letters · 1996 · 41 citations

Engineering, Electrical Engineering, Optical Materials +16

InGaAs/InP composite collector heterostructure bipolar transistors

A. Feygenson, D. Ritter, R. A. Hamm et al. · Electronics Letters · 1992 · 40 citations

Engineering, Electrical Engineering, Materials Science +17

Semiconductor lasers fabricated by selective area epitaxy

Yuh‐Lin Wang, H. Temkin, R. A. Hamm et al. · Electronics Letters · 1991 · 33 citations

Engineering, Electrical Engineering, Materials Science +16