A. Hesse

Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)

A. Hesse, J. Stangl, V. Holý et al. · Physical review. B, Condensed matter · 2002 · 75 citations · Full text

Engineering, Buried Islands, Silicon On Insulator +17

Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping

Tobias U. Schülli, M. Stoffel, A. Hesse et al. · Physical Review B · 2005 · 59 citations

Island Size, Engineering, Crystal Growth Technology +19

Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction

J. Stangl, A. Hesse, V. Holý et al. · Applied Physics Letters · 2003 · 35 citations

Materials Science, Buried Ge Islands, Engineering +11

Intraband absorption and photocurrent spectroscopy of self-assembled <i>p</i>-type Si/SiGe quantum dots

Thomas Fromherz, W. Mac, A. Hesse et al. · Applied Physics Letters · 2002 · 28 citations

Absorption Line, Optical Materials, Quantum Photonics +24

Investigation of shape, strain, and interdiffusion in InGaAs quantum rings using grazing incidence x-ray diffraction

Michael Sztucki, Till H. Metzger, Virginie Chamard et al. · Journal of Applied Physics · 2006 · 19 citations

Engineering, Electron Diffraction, Semiconductor Nanostructures +19