M.N. Finke

Effect of strain on the threshold current of GaInP/AlGaInP quantum well lasers emitting at 633 nm

A. Valster, C.J. van der Poel, M.N. Finke et al. · 2005 · 74 citations

Photonics, Engineering, Physics +14

High quality AlxGa1−x−yInyP alloys grown by MOVPE on (311) B GaAs substrates

A. Valster, C.T.H.F. Liedenbaum, M.N. Finke et al. · Journal of Crystal Growth · 1991 · 66 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +5

Low threshold current density (760 A/cm ² ) and high power (45 mW) operation of strained Ga _0.42 In _0.58 P multiquantum well laser diodes emitting at 632 nm

A. Valster, C.J. van der Poel, M.N. Finke et al. · Electronics Letters · 1992 · 45 citations

633 nm CW operation of GaInP/AlGaInP laser-diodes

A. Valster, C.T.H.F. Liedenbaum, J. M. M. v. d. Heijden et al. · 1990 · 15 citations

Optical Materials, Engineering, Laser Science +16

Investigation of TE and TM polarised laser emission in GaInP/AlGaInP lasers by growth-controlled strain

M.J.B. Boermans, Sebastian Hagen, A. Valster et al. · Electronics Letters · 1990 · 13 citations

Engineering, Growth-controlled Strain, Appropriate Samples +18