M.J.B. Boermans

Effect of strain on the threshold current of GaInP/AlGaInP quantum well lasers emitting at 633 nm

A. Valster, C.J. van der Poel, M.N. Finke et al. · 2005 · 74 citations

Engineering, Electrical Engineering, Materials Science +17

High quality AlxGa1−x−yInyP alloys grown by MOVPE on (311) B GaAs substrates

A. Valster, C.T.H.F. Liedenbaum, M.N. Finke et al. · Journal of Crystal Growth · 1991 · 66 citations

Engineering, Materials Engineering, Materials Science +11

Improved performance of compressively as well as tensile strained quantum-well lasers

M. P. C. M. Krijn, G. W. ’t Hooft, M.J.B. Boermans et al. · Applied Physics Letters · 1992 · 49 citations

Engineering, Electrical Engineering, Materials Science +17

Low threshold current density (760 A/cm ² ) and high power (45 mW) operation of strained Ga _0.42 In _0.58 P multiquantum well laser diodes emitting at 632 nm

A. Valster, C.J. van der Poel, M.N. Finke et al. · Electronics Letters · 1992 · 45 citations

Engineering, Electrical Engineering, Materials Science +17

Experimental determination of the relation between modal gain and current density for AlGaAs single quantum well lasers grown by metalorganic vapor phase epitaxy

Sebastian Hagen, H.F.J. van 'T Blik, M.J.B. Boermans et al. · Applied Physics Letters · 1988 · 40 citations

Engineering, Electrical Engineering, Materials Science +17