Raghuraj Hathwar

Analysis of the reverse I-V characteristics of diamond-based PIN diodes

Mehdi Saremi, Raghuraj Hathwar, Maitreya Dutta et al. · Applied Physics Letters · 2017 · 52 citations · Full text

Semiconductor Technology, Diamond-like Carbon, Electrical Engineering +14

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Jason Holmes, Maitreya Dutta, Franz A. Koeck et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2018 · 33 citations

Math Xmlns, Mi Mathvariant=, Experimental Nuclear Physics +13

Measurement and effects of polarization fields on one-monolayer-thick InN/GaN multiple quantum wells

Lin Zhou, Emmanouil Dimakis, Raghuraj Hathwar et al. · Physical Review B · 2013 · 32 citations

Polarization Fields, Quantum Science, Wide-bandgap Semiconductor +11

Demonstration of Diamond-Based Schottky p-i-n Diode With Blocking Voltage &gt; 500 V

Maitreya Dutta, Franz A. Koeck, Raghuraj Hathwar et al. · IEEE Electron Device Letters · 2016 · 28 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Temperature dependent simulation of diamond depleted Schottky PIN diodes

Raghuraj Hathwar, Maitreya Dutta, Franz A. Koeck et al. · Journal of Applied Physics · 2016 · 26 citations · Full text

Semiconductor Technology, Electrical Engineering, Semiconductor Device +12