R. G. van Silfhout

Strain relaxation during the initial stages of growth in Ge/Si(001)

Augusta Williams, J.M.C. Thornton, J. Emyr Macdonald et al. · Physical review. B, Condensed matter · 1991 · 114 citations

Materials Science, Materials Engineering, Surface Characterization +14

The influence of Sb as a surfactant on the strain relaxation of Ge/Si(001)

J.M.C. Thornton, Augusta Williams, J. Emyr Macdonald et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 59 citations

Materials Engineering, Materials Science, Surface Characterization +14

Structure of the Ge(111)-c(2 × 8) surface as determined from scattered X-ray intensities along crystal truncation rods

R. G. van Silfhout, J. F. van der Veen, C. Norris et al. · Faraday Discussions of the Chemical Society · 1990 · 47 citations

X-ray Crystallography, Engineering, Electron Diffraction +17

Structure of Ge(111)√3 × √3<i>R</i>30°-Au determined by surface x-ray diffraction

Paul B. Howes, C. Norris, M.S. Finney et al. · Physical review. B, Condensed matter · 1993 · 40 citations

X-ray Crystallography, Crystal Structure, Engineering +16

Asymmetrical dimers on the Ge(001)-2 × 1-Sb surface observed using X-ray diffraction

M. Lohmeier, H. A. van der Vegt, R. G. van Silfhout et al. · Surface Science · 1992 · 37 citations

Materials Science, Surface Characterization, Engineering +8