H.C.-H. Wang

Continuous and Precise Work Function Adjustment for Integratable Dual Metal Gate CMOS Technology Using Hf–Mo Binary Alloys

T.-L. Li, Cheng-Ling Hu, Wan‐Ling Ho et al. · IEEE Transactions on Electron Devices · 2005 · 57 citations

Materials Engineering, Materials Science, Electrical Engineering +15

A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs-from single electron emission to PBTI recovery transient

Tahui Wang, Chien-Tai Chan, Chun-Jung Tang et al. · IEEE Transactions on Electron Devices · 2006 · 39 citations

Electrical Engineering, Hfsion Trap Properties, Engineering +13

Substrate-strained silicon technology: process integration [CMOS technology]

H.C.-H. Wang, Y.-P. Wang, S.-J. Chen et al. · 2004 · 26 citations

Electrical Engineering, Engineering, Vlsi Design +12

Low power device technology with SiGe channel, HfSiON, and Poly-Si gate

H.C.-H. Wang, Shang-Jr Chen, Ming-Fang Wang et al. · 2005 · 19 citations

Engineering, Vlsi Design, Nm Eot Hfsion +16

Reliability of HfSiON as gate dielectric for advanced CMOS technology

H.C.-H. Wang, Ching-Wei Tsai, Shang-Jr Chen et al. · 2005 · 16 citations

Materials Engineering, Hc Lifetime, Electrical Engineering +14