Martin S. Williams

Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy

Sushma Raghuvansy, Jonathan P. McCandless, Marco Schowalter et al. · APL Materials · 2023 · 29 citations · Full text

Materials Science, Oxide Heterostructures, Materials Engineering +13

Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE

Partha Mukhopadhyay, İsa Hatipoğlu, Ymir Kalmann Frodason et al. · Applied Physics Letters · 2022 · 22 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +18

Growth, catalysis, and faceting of α-Ga2O3 and α-(In<i>x</i>Ga1−<i>x</i>)2O3 on <i>m</i>-plane α-Al2O3 by molecular beam epitaxy

Martin S. Williams, Manuel Alonso‐Orts, Marco Schowalter et al. · APL Materials · 2024 · 15 citations · Full text

Materials Science, Oxide Heterostructures, Materials Engineering +12

Growth of <i>α</i>-Ga₂O₃ on <i>α</i>-Al₂O₃ by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy

Jonathan P. McCandless, Derek Rowe, Naomi Pieczulewski et al. · Japanese Journal of Applied Physics · 2023 · 12 citations · Full text