Th. Förster

Ga adatom migration over a nonplanar substrate during molecular beam epitaxial growth of GaAs/AlGaAs heterostructures

S. Nilsson, E. Van Gieson, D. J. Arent et al. · Applied Physics Letters · 1989 · 72 citations

Semiconductors, Nonplanar Substrate, Epitaxial Growth +14

High-power operation of strained InGaAs/AlGaAs single quantum well lasers

A. Moser, A. Oosenbrug, E.E. Latta et al. · Applied Physics Letters · 1991 · 67 citations

Photonics, Electrical Engineering, Strained Single Quantum +13

Si and GaAs 0.5 <i>μ</i> m-gate Schottky-barrier field-effect transistors

W. Baechtold, K. Daetwyler, Th. Förster et al. · Electronics Letters · 1973 · 51 citations

Laser operation-induced migration of beryllium at mirrors of GaAs/AlGaAs laser diodes

A. Jakubowicz, A. Oosenbrug, Th. Förster · Applied Physics Letters · 1993 · 14 citations

Materials Science, Wide-bandgap Semiconductor, Gaas/algaas Laser Diodes +14

Complementary Josephson-junction circuit: a fast flip-flop and logic gate

W. Baechtold, Th. Förster, W. Heuberger et al. · Electronics Letters · 1975 · 13 citations

Engineering, Complementary Logic Circuit, Quantum Engineering +16