Swapna Sunkari

The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles

Ryota Wada, Tsutomu Nagayama, N. Tokoro et al. · Japanese Journal of Applied Physics · 2021 · 23 citations

Electrical Engineering, Dopant Ions, Engineering +10

Statistical Analysis of Killer and Non-Killer Defects in SiC and the Impacts to Device Performance

Hrishikesh Das, Swapna Sunkari, Joshua Justice et al. · Materials science forum · 2020 · 22 citations

Engineering, Non-killer Defects, Defect Tolerance +17

Is there a perfect SiC MosFETs Device on an imperfect crystal?

Thomas Neyer, Martin Domeij, Hrishikesh Das et al. · 2021 · 17 citations

Effect of Defects in Silicon Carbide Epitaxial Layers on Yield and Reliability

Hrishikesh Das, Swapna Sunkari, Joshua Justice et al. · Materials science forum · 2019 · 14 citations

Engineering, Defect Tolerance, Reliability Engineering +16

Investigation of longitudinal-optical phonon-plasmon coupled modes in SiC epitaxial film using fourier transform infrared reflection

Swapna Sunkari, M. S. Mazzola, Janice Mazzola et al. · Journal of Electronic Materials · 2005 · 13 citations

Plasmonics, Fourier Transform, Sic Epitaxial Film +7