M. Petrichuk

Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal–oxide–semiconductor field-effect transistors

N. Lukyanchikova, M. Petrichuk, N. Garbar et al. · Journal of Applied Physics · 2003 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of the substrate voltage on the random telegraph signal parameters in submicron n -channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density

N. Lukyanchikova, M. Petrichuk, N. Garbar et al. · Applied Physics A · 2000 · 31 citations

Engineering, Computer Engineering, Electrical Engineering +16

Back and front interface related generation-recombination noise in buried-channel SOI pMOSFETs

N. Lukyanchikova, M. Petrichuk, N. Garbar et al. · IEEE Transactions on Electron Devices · 1996 · 27 citations

Engineering, Electrical Engineering, Microelectronics +16

The 1/f/sup 1.7/ noise in submicron SOI MOSFETs with 2.5 nm nitrided gate oxide

N. Lukyanchikova, M. Petrichuk, N. Garbar et al. · IEEE Transactions on Electron Devices · 2002 · 21 citations

Engineering, Electrical Engineering, Microelectronics +16

Non-trivial GR and 1/<i>f</i>noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO₂interface

N. Lukyanchikova, M. Petrichuk, N. Garbar et al. · Semiconductor Science and Technology · 1999 · 21 citations

Engineering, Electrical Engineering, Materials Science +17