Maxime Forster

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

Maxime Forster, Erwann Fourmond, Fiacre Rougieux et al. · Applied Physics Letters · 2012 · 49 citations · Full text

Materials Science, Boron Nitride, Engineering +14

Towards a unified low-field model for carrier mobilities in crystalline silicon

Florian Schindler, Maxime Forster, Juliane Broisch et al. · Solar Energy Materials and Solar Cells · 2014 · 46 citations

Device Modeling, Crystalline Silicon, Engineering +8

Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

Fiacre Rougieux, Bianca Lim, Jan Schmidt et al. · Journal of Applied Physics · 2011 · 46 citations

Engineering, Oxygen Dimer Concentration, Optoelectronic Devices +17

Ga co‐doping in Cz‐grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications

Maxime Forster, Erwann Fourmond, R. Einhaus et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 40 citations · Full text

Wide-bandgap Semiconductor, Engineering, Pv Applications +22

Electrical properties of boron, phosphorus and gallium co-doped silicon

Erwann Fourmond, Maxime Forster, R. Einhaus et al. · Energy Procedia · 2011 · 30 citations · Full text

Materials Science, Electrical Engineering, Engineering +13