Byeong Geun Kim - Concepedia

Author

Byeong Geun Kim

Korea Institute of Ceramic Engineering and Technology

Also Known As

Byeong Geun Kim, Kim, Byeong Geun

Publications

215

Citations

H-Index

Concepts

All Affiliations

Korea Institute of Ceramic Engineering and Technology Sungkyunkwan University Yonsei University Korea University of Technology and Education Dong-Eui University

About

Byeong Geun Kim is an author at Korea Institute of Ceramic Engineering and Technology specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	105
2	Applied Physics	6	6	105
3	Materials Science	6	6	105
4	Materials Engineering	3	3	62
5	Chemical Engineering	1	1	10

Byeong Geun Kim

Publications

125

Citations

H-Index

Page 1

	Year	Citations
High-Temperature Chemical Vapor Deposition for SiC Single Crystal Bulk Growth Using Tetramethylsilane as a Precursor Deok-Hui Nam, Byeong Geun Kim, Jiyoung Yoon, Crystal Growth & Design Materials ScienceMaterials EngineeringSic Bulk GrowthHtcvd MethodEngineering	2014	29
Recent progress of inorganic photoresists for next-generation EUV lithography Yeo Kyung Kang, Sun Jin Lee, Sunghun Eom, Journal of Materials Chemistry C	2024	20
Stress-induced change of Cu-doped Bi2Te3 thin films for flexible thermoelectric applications Byeong Geun Kim, Sang Hyun Bae, Jihyeon Byeon, Materials Letters Materials ScienceFerroelasticsMaterial AnalysisEngineeringFlexible Thermoelectric Applications	2020	18
Doping amount dependence of phase formation and microstructure evolution in heavily Cu-doped Bi<sub>2</sub>Te<sub>3</sub> films for thermoelectric applications Kang Hyun Seo, Byeong Geun Kim, Changhyun Lim, CrystEngComm Cu-doped Bi2te3 FilmsEngineeringThermoelectricsSolid-state ChemistryBi2te3 Targets	2017	17
Synthesis of α-SiC from tetramethylsilane by chemical vapor deposition at high temperature Seong‐Min Jeong, Deok-Hui Nam, Byeong Geun Kim, Applied Physics Express Materials ScienceMaterials EngineeringEngineeringSuccessful SynthesisApplied Physics	2014	16
The role of an SiC interlayer at a graphite–silicon liquid interface in the solution growth of SiC crystals Ji Eun Lee, Byeong Geun Kim, Ji-Young Yoon, Ceramics International Materials ScienceSic CrystalsEngineeringSurface ScienceApplied Physics	2016	15
Condensation of vapor species at the outlets in high temperature chemical vapor deposition using tetramethylsilane as a precursor for SiC bulk growth Byeong Geun Kim, Ji Young Yoon, Chang-Hyoung Yoo, CrystEngComm Materials ScienceChemical EngineeringSic Bulk GrowthEngineeringSurface Science	2015	10

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