D. Lefforge

Effects of strain on boron diffusion in Si and Si1−<i>x</i>Ge<i>x</i>

P. Kuo, Judy L. Hoyt, J. F. Gibbons et al. · Applied Physics Letters · 1995 · 107 citations

Engineering, Materials Engineering, Materials Science +17

GaN-Based Light Emitting Diodes with Tunnel Junctions

Tetsuya Takeuchi, G. Hasnain, S. Corzine et al. · Japanese Journal of Applied Physics · 2001 · 101 citations

Engineering, Electrical Engineering, Materials Engineering +16

Study of Mg diffusion during metalorganic chemical vapor deposition of GaN and AlGaN

Ying‐Lan Chang, Mike J. Ludowise, D. Lefforge et al. · Applied Physics Letters · 1999 · 39 citations

Engineering, Materials Engineering, Materials Science +17

Boron Diffusion in Si and Si_1−xGe_x

P. Kuo, Judy L. Hoyt, J. F. Gibbons et al. · MRS Proceedings · 1995 · 33 citations

Engineering, Materials Engineering, Materials Science +12

Effects of Si thermal oxidation on B diffusion in Si and strained Si1−<i>x</i>Ge<i>x</i> layers

P. Kuo, Judy L. Hoyt, J. F. Gibbons et al. · Applied Physics Letters · 1995 · 31 citations

Engineering, Materials Engineering, Materials Science +17