Ingo Tischer

Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence

Matthias Hocker, Pascal Maier, Lisa Jerg et al. · Journal of Applied Physics · 2016 · 18 citations

Semiconductors, Wide-bandgap Semiconductor, Photoluminescence +9

Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets

K. J. Fujan, Martin Feneberg, Benjamin Neuschl et al. · Applied Physics Letters · 2010 · 16 citations

Wide-bandgap Semiconductor, Overall Luminescence Signal, Engineering +16

Optical gas sensing by micro-photoluminescence on multiple and single ZnO nanowires

Manfred Madel, Julian Jakob, Florian Huber et al. · physica status solidi (a) · 2015 · 14 citations

Chemical Engineering, Optical Materials, Optical Gas Sensing +15

Stacking fault‐related luminescence features in semi‐polar GaN

Ingo Tischer, Martin Feneberg, M. Schirra et al. · physica status solidi (b) · 2011 · 13 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Phonon Replica +11

Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiNx interlayers

Benjamin Neuschl, K. J. Fujan, Martin Feneberg et al. · Applied Physics Letters · 2010 · 12 citations

Aluminium Nitride, Optical Materials, Engineering +17