Hisanori Ishiguro

Estimation of the Intra-Band Relaxation Time in Undoped AlGaAs Injection Laser

Minoru Yamada, Hisanori Ishiguro, Hitoshi Nagato · Japanese Journal of Applied Physics · 1980 · 61 citations

Engineering, Materials Science, Electronic Materials +15

Gain Calculation of Undoped GaAs Injection Laser Taking Account of Electronic Intra-Band Relaxation

Minoru Yamada, Hisanori Ishiguro · Japanese Journal of Applied Physics · 1981 · 43 citations

Engineering, Electrical Engineering, Physics +17

High efficient GaAlAs light-emitting diodes of 660 nm with a double heterostructure on a GaAlAs substrate

Hisanori Ishiguro, Kazuhiro Sawa, S. Nagao et al. · Applied Physics Letters · 1983 · 30 citations

Engineering, Electrical Engineering, Materials Science +16

An Approximate Analysis of Gain Suppression in Injection Lasers for Band-to-Band and Band-to-Impurity-Level Transitions

Minoru Yamada, Kadoki Hayano, Hisanori Ishiguro et al. · Japanese Journal of Applied Physics · 1979 · 19 citations

Engineering, Electrical Engineering, Optoelectronics +14

Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate

Shigefusa F. Chichibu, Kengo Nagata, Masaki Oya et al. · Applied Physics Letters · 2023 · 14 citations

Engineering, Materials Engineering, Materials Science +17