Martin Füchsle is an author at UNSW Sydney specializing in applied physics, electrical engineering, and nanotechnology.
Top concepts
PhysicsEngineeringQuantum DotsNanotechnologyApplied PhysicsNanoelectronicsMicroelectronicsElectrical Engineering
Publications per year
2009–2009
1
1
Atomic-Scale, All Epitaxial In-Plane Gated Donor Quantum Dot in Silicon
Andreas Fuhrer, Martin Füchsle, T. C. G. Reusch et al. · Nano Letters · 2009 · 111 citations
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