T. C. G. Reusch

Ohm’s Law Survives to the Atomic Scale

Bent Weber, Suddhasatta Mahapatra, Hoon Ryu et al. · Science · 2012 · 336 citations

Engineering, Electrical Engineering, Materials Science +17

Realization of Atomically Controlled Dopant Devices in Silicon

F. J. Rueß, Wilson Pok, T. C. G. Reusch et al. · Small · 2007 · 116 citations

Engineering, Materials Engineering, Materials Science +17

Atomic-Scale, All Epitaxial In-Plane Gated Donor Quantum Dot in Silicon

Andreas Fuhrer, Martin Füchsle, T. C. G. Reusch et al. · Nano Letters · 2009 · 111 citations

Engineering, Electrical Engineering, Materials Science +17

Scanning probe microscopy for silicon device fabrication

M. Y. Simmons, F. J. Rueß, Kuan Eng Johnson Goh et al. · Molecular Simulation · 2005 · 57 citations

Engineering, Materials Engineering, Materials Science +17

Reaction paths of phosphine dissociation on silicon (001)

Oliver Warschkow, Neil J. Curson, Steven R. Schofield et al. · The Journal of Chemical Physics · 2016 · 57 citations · Full text

Natural Sciences, Chemistry, Physics +17