Olivier Palais - Concepedia

Author

Olivier Palais

Aix-Marseille Université ORCID

Also Known As

A Klix, Butté, S., Escoubas, L., O Palais, O. Palais, Olivier Palais, Palais, O., Palais, Olivier, Sibai, A.

Publications

753

Citations

H-Index

Concepts

All Affiliations

Aix-Marseille Université Commissariat à l'Énergie Atomique et aux Énergies Alternatives Institut des Matériaux, de Microélectronique et des Nanosciences de Provence Centre National de la Recherche Scientifique CEA Cadarache

About

Olivier Palais is an author at Aix-Marseille Université specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	21	494
2	Applied Physics	16	21	494
3	Natural Sciences	5	5	92
4	Chemical Engineering	1	1	35
5	Chemistry	1	1	11

Olivier Palais

Publications

545

Citations

H-Index

Page 1

	Year	Citations
Contactless measurement of bulk lifetime and surface recombination velocity in silicon wafers Olivier Palais, A. Arcari Journal of Applied Physics EngineeringContactless MeasurementSilicon On InsulatorSurface Recombination VelocityInterconnect (Integrated Circuits)	2003	56
Silicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell F. Gourbilleau, Céline Ternon, David Maestre, Journal of Applied Physics Optical MaterialsEngineeringOptical AbsorptionOptoelectronic DevicesSilicon On Insulator	2009	54
Influence of iron contamination on the performances of single-crystalline silicon solar cells: Computed and experimental results Sébastien Dubois, Olivier Palais, M. Pasquinelli, Journal of Applied Physics Materials ScienceExperimental ResultsElectrical EngineeringEngineeringSolar Energy Utilisation	2006	37
Effect of intentional bulk contamination with iron on multicrystalline silicon solar cell properties Sébastien Dubois, Olivier Palais, P.J. Ribeyron, Journal of Applied Physics EngineeringConversion EfficiencySilicon On InsulatorPhotovoltaicsChemical Engineering	2007	35
Segregation phenomena in large-size cast multicrystalline Si ingots S. Martinuzzi, I. Périchaud, Olivier Palais Solar Energy Materials and Solar Cells Materials EngineeringMaterials ScienceWafer Scale ProcessingEngineeringApplied Physics	2007	29
Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films B. Dridi Rezgui, A. Sibaï, T. Nychyporuk, Applied Physics Letters EngineeringPlasmon-enhanced PhotovoltaicsTotal PressureSilicon On InsulatorSilicon Quantum Dots	2010	28
Comparing the Response of a SiC and a sCVD Diamond Detectors to 14-MeV Neutron Radiation O. Obraztsova, Laurent Ottaviani, A. Klix, IEEE Transactions on Nuclear Science EngineeringNuclear PhysicsNuclear DataScvd Diamond DetectorsRadiation Detectors	2018	26
Radiation Silicon Carbide Detectors Based on Ion Implantation of Boron F. Issa, V. Vervisch, L. Ottaviani, IEEE Transactions on Nuclear Science EngineeringNuclear PhysicsNuclear DataRadiation SystemsNeutron Converter Layer	2014	25
Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cells Maxim Hayes, Benoît Martel, Giri Wahyu Alam, physica status solidi (a) Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering	2019	20
Comparison Between Silicon Carbide and Diamond for Thermal Neutron Detection at Room Temperature O. Obraztsova, Laurent Ottaviani, B. Geslot, IEEE Transactions on Nuclear Science	2020	20

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