Journal of Applied Physics · 2009 · 54 citations · 24 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials CharacterizationOptical MaterialsSemiconductor MaterialsOxide SemiconductorsPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor NanomaterialsSolar Cell MaterialsSolar CellsAmorphous SiliconAnnealing Temperature EffectsNanostructured SiliconOptical AbsorptionPhotoluminescenceSilicon DioxideSilicon NanocrystalsSilicon Nanostructures
Si-rich-SiO2(SRSO)/SiO2 multilayers (MLs) have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters (Si-ncls) within the SRSO sublayer and annealing temperature influence optical absorption as well as photoluminescence. The optimized annealing temperature has been found to be 1100 °C, which allows the recovery of defects and thus enhances photoluminescence. Four MLs with Si-ncl size ranging from 1.5 to 8 nm have been annealed using the optimized conditions and then studied by transmission measurements. Optical absorption has been modeled so that a size effect in the linear absorption coefficient α (in cm−1) has been evidenced and correlated with TEM observations. It is demonstrated that amorphous Si-ncl absorption is fourfold higher than that of crystalline Si-ncls.
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Silicon nanostructures for third generation photovoltaic solar cells
Gavin Conibeer, Martin A. Green, Richard Corkish et al. · Thin Solid Films · 2006 · 586 citations