D. M. Holmes

Nucleation and Growth of Islands on GaAs Surfaces

A. R. Avery, Harvey Dobbs, D. M. Holmes et al. · Physical Review Letters · 1997 · 87 citations

Materials Science, Surface Characterization, Engineering +14

Spatial distribution of In during the initial stages of growth of InAs on GaAs(001)-c(4 × 4)

J. G. Belk, J. L. Sudijono, D. M. Holmes et al. · Surface Science · 1996 · 51 citations

Semiconductor Technology, Electrical Engineering, Engineering +7

Arsenic-deficient GaAs(001)-(2×4) surfaces: Scanning-tunneling-microscopy evidence for locally disordered (1×2) Ga regions

A. R. Avery, D. M. Holmes, T. S. Jones et al. · Physical review. B, Condensed matter · 1994 · 43 citations

Step Edges, Engineering, Ga Regions +16

Direct evidence for the step density model in the initial stages of the layer-by-layer homoepitaxial growth of GaAs(111)A

D. M. Holmes, J. Sudijono, C. F. McConville et al. · Surface Science · 1997 · 37 citations

Engineering, Physics, Layer-by-layer Homoepitaxial Growth +7

Surface evolution in GaAs(110) homoepitaxy; from microscopic to macroscopic morphology

D. M. Holmes, Eng Soon Tok, J. L. Sudijono et al. · Journal of Crystal Growth · 1998 · 32 citations

Semiconductors, Materials Science, Surface Evolution +7