D. Dobosz

Microscopic bending of GaAs layers grown by epitaxial lateral overgrowth

Z. R. Żytkiewicz, J. Z. Domagała, D. Dobosz et al. · Journal of Applied Physics · 1998 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +17

Spectrum selective UV detectors from an p-ZnO:As/n-GaN diodes grown by Molecular Beam Epitaxy

E. Przeździecka, K. Gościński, M. Stachowicz et al. · Sensors and Actuators A Physical · 2013 · 22 citations

Engineering, Electrical Engineering, Materials Science +16

Characteristics of ZnO : As/GaN heterojunction diodes obtained by PA-MBE

E. Przeździecka, A. Wierzbicka, A. Reszka et al. · Journal of Physics D Applied Physics · 2012 · 22 citations

Engineering, Electrical Engineering, Materials Science +17

Epitaxial lateral overgrowth of GaAs: effect of doping on LPE growth behaviour

Z. R. Żytkiewicz, D. Dobosz, M. Pawłowska · Semiconductor Science and Technology · 1999 · 19 citations

Engineering, Electrical Engineering, Materials Science +17

Strain in GaAs layers grown by liquid phase epitaxial lateral overgrowth

Z. R. Żytkiewicz, J. Z. Domagała, D. Dobosz et al. · Journal of Applied Physics · 1999 · 18 citations

Natural Sciences, Materials Engineering, Materials Science +17