Jesper Engvall

Electroluminescence at room temperature of a Si<i>n</i>Ge<i>m</i> strained-layer superlattice

Jesper Engvall, J. Olajos, H. G. Grimmeiss et al. · Applied Physics Letters · 1993 · 68 citations

Semiconductors, Room Temperature, Electrical Engineering +13

Luminescence from monolayer-thick Ge quantum wells embedded in Si

Jesper Engvall, J. Olajos, H. G. Grimmeiss et al. · Physical review. B, Condensed matter · 1995 · 34 citations

Materials Science, Ii-vi Semiconductor, Bulk Si Matrix +13

Band gap of strain-symmetrized, short-period Si/Ge superlattices

J. Olajos, Jesper Engvall, H. G. Grimmeiss et al. · Physical review. B, Condensed matter · 1992 · 32 citations

Materials Science, Semiconductors, Band-gap Energies +12

Band-to-band transitions in strain-symmetrized, short-period Si/Ge superlattices

J. Olajos, Jesper Engvall, H. G. Grimmeiss et al. · Thin Solid Films · 1992 · 31 citations

Engineering, Short-period Si/ge Superlattices, Physics +4

Room-temperature photoluminescence of Ge<i>m</i>Si<i>n</i>Ge<i>m</i> structures

M. Gail, G. Abstreiter, J. Olajos et al. · Applied Physics Letters · 1995 · 25 citations

Semiconductors, Materials Science, Luminescence Intensity +15