5
Publications
157
Citations
5
H-Index
2008
Active since
R. Broesler is an author at Lawrence Berkeley National Laboratory specializing in materials science, applied physics, and engineering.
Top concepts
EngineeringApplied PhysicsMaterial SciencePhysicsSemiconductorsQuantum MaterialsCondensed Matter PhysicsThin FilmsOptical MaterialsCrystalline Defects
Publications per year
2008–2010
5
5
Band gap bowing parameter of In1−xAlxN
Reese E. Jones, R. Broesler, K. M. Yu et al. · Journal of Applied Physics · 2008 · 72 citations
Temperature dependence of the band gap of ZnSe1−xOx
R. Broesler, E. E. Häller, W. Walukiewicz et al. · Applied Physics Letters · 2009 · 35 citations
Engineering, Temperature Dependence, Optoelectronic Devices +17
Low gap amorphous GaN1−xAsx alloys grown on glass substrate
K. M. Yu, R. Broesler, Z. Liliental‐Weber et al. · Applied Physics Letters · 2010 · 18 citations
Wide-bandgap Semiconductor, Optical Materials, Engineering +16
Non‐equilibrium GaNAs alloys with band gap ranging from 0.8‐3.4 eV
K. M. Yu, R. Broesler, C. R. Staddon et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2010 · 17 citations · Full text
Materials Science, Materials Engineering, Semiconductors +15
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