Jeremy D. Acord

Optical Properties of Rectangular Cross-sectional ZnS Nanowires

Qihua Xiong, Gong Chen, Jeremy D. Acord et al. · Nano Letters · 2004 · 199 citations

Optical Materials, Engineering, Optical Absorption +17

Tensile stress generation and dislocation reduction in Si-doped AlxGa1−xN films

Ian Manning, X. Weng, Jeremy D. Acord et al. · Journal of Applied Physics · 2009 · 44 citations

Materials Science, Materials Engineering, Engineering +13

In situ stress measurements during MOCVD growth of AlGaN on SiC

Jeremy D. Acord, Srinivasan Raghavan, David W. Snyder et al. · Journal of Crystal Growth · 2004 · 33 citations

Materials Engineering, Materials Science, Aluminium Nitride +7

Evolution of threading dislocations in MOCVD-grown GaN films on (111) Si substrates

X. Weng, Srinivasan Raghavan, Jeremy D. Acord et al. · Journal of Crystal Growth · 2006 · 28 citations

Materials Engineering, Materials Science, Semiconductor Technology +6

<i>In situ</i> measurement of stress generation arising from dislocation inclination in AlxGa1−xN:Si thin films

Jeremy D. Acord, Ian Manning, Xiaojun Weng et al. · Applied Physics Letters · 2008 · 25 citations

Materials Science, Materials Engineering, Dislocation Inclination +15