Concepedia
Statistics
Publications
3
Citations
425
H-Index
Active since
1998
Affiliations
Schott (Germany)(Current)
Technical University of Munich
R. Oberhuber is an author at Schott (Germany) specializing in electrical engineering, physics, and applied physics.
Top concepts
PhysicsEngineeringApplied PhysicsElectrical EngineeringDevice ModelingNanoelectronicsCondensed Matter PhysicsSemiconductorsMicroelectronicsQuantum Materials
Publications per year
1998–2000
Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET’s
R. Oberhuber, G. Zandler, P. Vogl · Physical review. B, Condensed matter · 1998 · 256 citations
Device Modeling, Semiconductor Technology, Electrical Engineering +11
Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors
R. Oberhuber, G. Zandler, P. Vogl · Applied Physics Letters · 1998 · 121 citations
Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14
Explaining the dependences of the hole and electron mobilities in Si inversion layers
A. Pirovano, Andrea L. Lacaita, G. Zandler et al. · IEEE Transactions on Electron Devices · 2000 · 48 citations
Wide-bandgap Semiconductor, Engineering, Silicon On Insulator +16
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