Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

R. Dahal, J. Li, S. Majety, +4

Applied Physics Letters

Optical MaterialsEngineeringHexagonal BoronOptoelectronic DevicesBorophene +18

Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers

J. Li, S. Majety, R. Dahal, +3

Applied Physics Letters

Optical MaterialsEngineeringOptical AbsorptionOptoelectronic DevicesChemistry +18

Hexagonal boron nitride epitaxial layers as neutron detector materials

J. Li, R. Dahal, S. Majety, +2

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment

Hexagonal BoronBoron NitrideApplied PhysicsHexagonal Boron Nitride

Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics

S. Majety, J. Li, X. K. Cao, +4

Applied Physics Letters

Oxide HeterostructuresPhotonicsMaterials ScienceSemiconductorsEngineering +13

Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers

T. C. Doan, S. Majety, S. J. Grenadier, +3

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment

Materials ScienceBoron NitrideEngineeringHexagonal Boron NitridePhysics +3

Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products

T. C. Doan, S. Majety, S. J. Grenadier, +3

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment

Materials ScienceHigh Energy ResolutionBoron NitrideEngineeringPhysics +6

Electrical transport properties of Si-doped hexagonal boron nitride epilayers

S. Majety, T. C. Doan, J. Li, +2

AIP Advances

SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesHbn Epilayers +12

Hexagonal boron nitride and 6H-SiC heterostructures

S. Majety, J. Li, W. P. Zhao, +4

Applied Physics Letters

SemiconductorsMaterials ScienceWide-bandgap SemiconductorElectronic DevicesEngineering +10

Band-edge transitions in hexagonal boron nitride epilayers

S. Majety, X. K. Cao, J. Li, +3

Applied Physics Letters

Hbn EpilayersOptical MaterialsEngineeringBand-edge TransitionsOptoelectronic Devices +16

Layer-structured hexagonal (BN)C semiconductor alloys with tunable optical and electrical properties

M. R. Uddin, S. Majety, J. Li, +2

Journal of Applied Physics

Materials ScienceLayer-structured HexagonalIi-vi SemiconductorOptical MaterialsGrowth Temperature +13