R. T. Carline

Spectroscopic ellipsometry characterization of strained and relaxed Si1−<i>x</i>Ge<i>x</i> epitaxial layers

Christopher Pickering, R. T. Carline, David J. Robbins et al. · Journal of Applied Physics · 1993 · 78 citations

Materials Science, Materials Engineering, Epitaxial Growth +12

Characterization of oxide layers on GaAs substrates

D. A. Allwood, R. T. Carline, N. J. Mason et al. · Thin Solid Films · 2000 · 62 citations

Semiconductors, Electrical Engineering, Engineering +5

Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers

A. Loudon, Philip A. Hiskett, Gerald S. Buller et al. · Optics Letters · 2002 · 59 citations

Dielectric function spectra of strained and relaxed Si1−<i>x</i>Ge<i>x</i> alloys (<i>x</i>=0–0.25)

C. Pickering, R. T. Carline · Journal of Applied Physics · 1994 · 47 citations · Full text

Materials Science, Materials Engineering, Relaxed Si1−xgex +12

Spectroscopic ellipsometry of Si1−<i>x</i>Ge<i>x</i> epilayers of arbitrary composition 0≤<i>x</i>≤0.255

R. T. Carline, Christopher Pickering, David J. Robbins et al. · Applied Physics Letters · 1994 · 38 citations

Materials Science, Engineering, Dislocation Interaction +15